A CMOS-MEMS Gyroscope Interface Circuit Design With High Gain and Low Temperature Dependence

作者：Sun Hongzhi^*; Jia Kemiao; Liu Xuesong; Yan Guizhen; Hsu Yu Wen; Fox Robert M; Xie Huikai

来源：IEEE Sensors Journal, 2011, 11(11): 2740-2748.

DOI：10.1109/JSEN.2011.2158819

• CMOS-MEMS
• differential difference amplifier (DDA)
• gyroscopes
• microelectromechanical systems (MEMS)
• monolithic integration

This paper describes an interface circuit design for monolithic CMOS-MEMS gyroscopes, based on a novel differential difference amplifier (DDA) with high gain, low temperature and process dependence, low noise, and low power consumption. The DDA achieves a 4 fF equivalent transcapacitance with a 0.01%/degrees C temperature variation. The DDA-based interface circuit has been integrated with a z-axis gyroscope on a foundry CMOS chip. A 4.5 zF / root Hz input-referred noise is achieved at 2 kHz, with a total power consumption of 4.25 mW. The gyroscope is fabricated with a post-CMOS bulk micromachining process and the device achieves a sensitivity of 1.2 mV /degrees /s and a noise floor 0.05 degrees /s/root Hz

• 出版日期2011-11
• 单位北京大学