Design of four-state inverter using quantum dot gate-quantum dot channel field effect transistor

作者：Karmakar S^*

来源：Electronics Letters, 2013, 49(18): 1131-1132.

DOI：10.1049/el.2013.0570

Quaternary logic can be implemented using quantum dot gate-quantum dot channel field effect transistors (QDG-QDCFETs) which produce four states in their transfer characteristics. A circuit model is used to simulate a four-state state inverter which is the basic building block of any multi-valued logic (MVL) circuit design. A basic problem of MVL implementation is the noise margin. The stable nature of the transfer characteristics of the QDG-QDCFET can make them a promising circuit element in future MVL circuit design. Comparison of fabricated device characteristics and the model data is shown.

• 出版日期2013-8-29