Air-stable n-type carbon nanotube field-effect transistors with Si3N4 passivation films fabricated by catalytic chemical vapor deposition

作者：Kaminishi D^*; Ozaki H; Ohno Y; Maehashi K; Inoue K; Matsumoto K; Seri Y; Masuda A; Matsumura H

来源：Applied Physics Letters, 2005, 86(11): 113115.

DOI：10.1063/1.1886898

Air-stable n-type carbon nanotube field-effect transistors (CNTFETs) were fabricated, with Si3N4 passivation films formed by catalytic chemical vapor deposition (Cat-CVD). Electrical measurements reveal that the p-type characteristics of CNTFETs are converted to n-type after fabricating Si3N4 passivation films at 270 degrees C. This indicates that adsorbed oxygen on the CNT sidewalls was removed during the formation process of the Si3N4 passivation films. In addition, the source-drain current of the n-type CNTFETs does not change over time under vacuum, or in air. Consequently, the n-type CNTFETs are completely protected by the Si3N4 passivation film from further effects of ambient gases. Therefore, Cat-CVD is one of the best candidates to fabricate Si3N4 passivation films on CNTFETs.

• 出版日期2005-3-14