科研之友
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摘要
A six-stage transimpedance amplifier (TIA) was realized in a 0.18-mu m complementary metal-oxide-semiconductor process. By adopting all effective gain-bandwidth product (GBW) enhancement technique, pi-type inductor peaking, the measured S(21), transimpedance gain, and bandwidth are 41 dB, 75 dB . Q, and 7.2 GHz, respectively, in the presence of an on-chip photodiode capacitance of 450 fF at the input. The 10-Gb/s TIA can operate tinder a maximum output swing of 800 mV(pp) and achieve a recorded GBW per DC power of 441.1 GHz . Omega/mW.
- 出版日期2008-12
- 单位中国科学院电工研究所; 清华大学
