科研之友
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摘要
Compared to other precursors, dimethyl aluminum hydride [(CH3)(2)AlH] has high vapor pressure of 2 torr at room temperature and a potential to form alumina films by CVD/ALD with low carbon impurity. Additionally, low deposition temperature of dimethyl aluminum hydride will avoid the formation of low-k interfacial layer during deposition, which is suitable for the MOS device fabrication. In this study, Al2O3 thin films have been deposited successfully from dimethyl aluminum hydride and O-2 to investigate the MOCVD behaviour as well as the observation of the band alignment of deposited Al2O3/Si gate stacks.
- 出版日期2014-3
- 单位安徽大学
