摘要
Fe-N thin films with good soft magnetic properties were prepared by RF sputtering and vacuum annealed at 250°C under 12000A/m magnetic field for 4 h. The structure of α′in thin films deposited at room temperature is different from α′formed through the Bain mechanism in bulk samples. In thin films, the lattice parameters of α′are c = 2.866 + 1.559CNα′, a = 2.864 + 0.181 CNα′.
- 出版日期2002-1
- 单位北京大学