A subthreshold current model for nanoscale short channel junctionless MOSFETs applicable to symmetric and asymmetric double-gate structure

作者：Jin Xiaoshi^*; Liu Xi; Kwon Hyuck In; Lee Jung Hee; Lee Jong Ho

来源：Solid-State Electronics, 2013, 82: 77-81.

DOI：10.1016/j.sse.2013.02.004

• Nanoscale
• Short channel
• Junctionless
• Double-gate MOSFETs
• Modeling

We proposed models of subthreshold characteristics for deep nanoscale short channel asymmetric junctionless Double-Gate (DG) MOSFETs. Models were derived by solving 2-D Poisson%26apos;s equation using variable separation technique. The subthreshold behavior with structure asymmetry such as different gate oxide thicknesses and different gate biases between the front-gate and back-gate can be exactly described. Design parameters such as body doping, body thickness and channel length were considered. The models were verified by comparing with device simulations%26apos; results.

• 出版日期2013-4
• 单位沈阳工业大学