A Double-Power-MOSFET Circuit for Protection From Single Event Burnout

作者：Barak Joseph^*; Haran Avner; David David; Rapaport Shimshon

来源：IEEE Transactions on Nuclear Science, 2008, 55(6): 3467-3472.

DOI：10.1109/TNS.2008.2007486

• Alpha particles
• hardening by circuit design
• power MOSFET
• SEB
• SEGR

Switching circuits, which use commercial off the shelf n-channel power MOSFETs, can be damaged by single event burnout (SEB). To prevent burnout events, we propose to replace the single power MOSFET in these circuits by two power MOSFETs connected in series and switched together. The power MOSFETs protect one another from SEB. Also, the voltage division between the transistors reduces (or eliminates) the occurrence of single event gate rupture (SEGR). The idea is demonstrated by two different circuits. The circuits were tested using heavy ions and alpha particles.

• 出版日期2008-12