Novel Double-Gate 1T-DRAM Cell Using Nonvolatile Memory Functionality for High-Performance and Highly Scalable Embedded DRAMs

作者：Park Ki Heung^*; Park Cheol Min; Kong Seong Ho; Lee Jong Ho

来源：IEEE Transactions on Electron Devices, 2010, 57(3): 614-619.

DOI：10.1109/TED.2009.2038650

• Capacitorless DRAM
• double-gate (DG) MOSFET
• embedded memory
• floating-body effect
• nonvolatile
• silicon-on-insulator (SOI) MOSFETs
• 1T-DRAM

We proposed for the first time a new double-gate 1T-DRAM cell to be applicable to sub-80-nm DRAM technology that has a silicon-oxide-nitride-oxide-silicon type storage node on the back gate ( control gate) for nonvolatile memory (NVM) functionality. An NVM functionality is achieved by Fowler-Nordheim tunneling of electrons into the nitride storage node. Then, holes are accumulated on the back-channel, which makes 1T-DRAM operation in fully depleted silicon-on-insulator (SOI) MOSFETs possible and enhances retention characteristics. We investigated the effect of the NVM functionality on 1T-DRAM performance in nanoscale 1T-DRAM cells through device simulation and verified the effect in 0.6-mu m devices fabricated on SOI wafers.

• 出版日期2010-3