Anti-phase boundaries-Free GaAs epilayers on "quasi-nominal" Ge-buffered silicon substrates

作者：Bogumilowicz Y^*; Hartmann J M; Cipro R; Alcotte R; Martin M; Bassani F; Moeyaert J; Baron T; Pin J B; Bao X; Ye Z; Sanchez E

来源：Applied Physics Letters, 2015, 107(21): 212105-1.

DOI：10.1063/1.4935943-1

We have obtained Anti-Phase Boundary (APB) free GaAs epilayers on "quasi-nominal" (001) silicon substrates, while using a thick germanium strain relaxed buffer between the GaAs layer and the silicon substrate in order to accommodate the 4% lattice mismatch between the two. As silicon (001) substrates always have a small random offcut angle from their nominal surface plane, we call them "quasi-nominal," We have focused on the influence that this small (<= 0,5 degrees) offcut angle has on the GaAs epilayer properties, showing that it greatly influences the density of APBs, On 0.5' offcut substrates, we obtained smooth, slightly tensile strained (R = 106%) GaAs epilayers that were single domain (e.g., without any APB), showing that it is not necessary to use large offcut substrates, typically 4 to 6', for GaAs epitaxy on silicon, These make the GaAs layers more compatible with the existing silicon manufacturing technology that uses "quasi-nominal" substrates.

• 出版日期2015-11-23
• 单位中国地震局