A unified carrier-based model for undoped symmetric double-gate and surrounding-gate MOSFETs

作者：He, Jin^*; Zhang, Lining; Zhang, Jian; Fu, Yue; Zheng, Rui; Chan, Mansun

来源：Semiconductor Science and Technology, 2007, 22(12): 1312-1316.

DOI：10.1088/0268-1242/22/12/013

• Carrier based model
• Pao Sah current equation
• Undoped symmetric double gate (DG)

A unified carrier-based model for the undoped symmetric double-gate (DG) and surrounding-gate (SRG) MOS transistors is presented in this paper. It is shown that the solutions to the Poisson equation and the Pao-Sah current equation for DG and SRG MOSFETs can be represented by an equivalent mathematical equation. Thus, a unified carrier-based model for DG and SRG MOSFETs is obtained by means of the parameter transformation, and such an approach can reduce the number of models that need to be developed to evaluate the performance of the large number of non-conventional MOSFET structures used to extend the semiconductor technology roadmap. The unified carrier-based model is compared with numerical solutions and the 2D simulation, and a good agreement is obtained with a wide range of structural parameters.

• 出版日期2007-12
• 单位北京大学; 香港科技大学; 北京大学深圳研究生院