A High Linear CMOS Body Effect Compensation Bootstrapped Switch

作者：Dong, Siwan; Liu, Minjie; Zhu, Zhangming^*; Yang, Yintang

来源：Journal of Circuits, Systems, and Computers, 2015, 24(3): 1550032.

DOI：10.1142/S0218126615500322

• Bootstrapped
• body effect compensation
• high linear switch
• CMOS

This paper presents a new bootstrapped switch with high speed and low nonlinear distortion. Instead of fixed voltage, the gate-to-source voltage of switch varies with input to implement first-order body effect compensation. Post-layout simulations have been done in standard 0.18-mu m CMOS process at 1.8 V, and results indicate that at 200 MHz sample rate, a peak signal-to-noise-and-distortion ratio (SNDR) of 98.4 dB, spurious-free dynamic range (SFDR) of 105.7 dB and total harmonic distortion (THD) of -104.9 dB can be acquired. For input frequency up to the 60 MHz frequency, proposed structure maintains vertical bar THD vertical bar over 85 dB, SFDR better than 86 dB, respectively.

• 出版日期2015-3
• 单位西安电子科技大学