Automatic statistical full quantum analysis of C-V and I-V characteristics for advanced MOS gate stacks

作者：Leroux C^*; Allain F; Toffoli A; Ghibaudo G; Reimbold G

来源：Microelectronic Engineering, 2007, 84(9-10): 2408-2411.

DOI：10.1016/j.mee.2007.04.026

• EOT
• VFB
• flat band
• work function
• characterization

In this work, we present a global methodology for an automatic and reliable extraction of VFB (Flat Band Voltage), EOT( Equivalent Oxide thickness) and leakage current at referenced biases (constant bias offsets from VFB or Vt, the threshold voltage) on advanced gate stacks. Parameter extraction is proposed as a post processing step after automatic measurement. A new reliable extraction method for VFB is presented and the interest of the methodology is highlighted on several experimental results.

• 出版日期2007-10
• 单位中国地震局