MOVPE growth of Al-free 808 nm high power lasers using TBP and TBA in pure N-2 ambient

作者：Tang XH^*; Zhang BL; Bo BX; Mei T; Chin MK

来源：Journal of Crystal Growth, 2006, 288(1): 23-26.

DOI：10.1016/j.jcrysgro.2005.12.023

• MOVPE
• TBP
• TBAs
• high power semiconductor laser diodes

In metaloriganic vapor-phase epitaxy (MOVPE) growth of III-V semiconductor compounds and device structures, arsine (AsH3) and phosphine (PH3) are normally used as group V precursors and hydrogen is used as the carrier gas, which is very toxic and has safety hazard. In this contribution, MOVPE growths of Al-free 808 nm high power diode lasers by using metalorganic (MO) group V sources, TBAs and TBP, and nitrogen as carrier gas has been reported. InGaAsP/InGaP/GaAs single quantum well (SQW) high power laser structure emitting at 808 nm has been adopted to characterize the material quality. Broad area stripe lasers with the stripe width of 150 pm have been fabricated from the wafers grown by the MOVPE using MO group V sources. Lasing of the device with threshold current density of 506A/cm(2) has been successfully achieved.

• 出版日期2006-2-2
• 单位南阳理工学院