Analysis of Deep-Level Defects on Proton Implanted Polycrystalline Silicon Thin Films Using Photoinduced Current Transient Spectroscopy

作者：Kim Won Sik^*; Kim Do Hyoung; Kwak Dong Wook; Lee Dong Wha; Lee Yeon Hwan; Cho Hoon Young

来源：Japanese Journal of Applied Physics, 2010, 49(12): 125802.

DOI：10.1143/JJAP.49.125802

Photoinduced current transient spectroscopy was used to investigate the defect states and capture kinetics of charge carriers for traps in low temperature polycrystalline silicon (poly-Si) films. A broad deep trap was found to be located 0.30 eV from the conduction band edge of poly-Si with capture cross section of 1.51 x 10(-15) cm(2). The variation of the trap capture kinetics with filling pulse time showed extended traps and linear arrays of traps, which might be grain boundary defects. Proton implantation and H-plasma treatment were used to improve poly-Si device characteristics, with traps more effectively suppressed by the former treatment. The ionized hydrogen atoms implanted into the poly-Si films are imputed to amorphize the defective poly-Si film with post-annealing enhancing re-crystallization, resulting films with fewer defects.

• 出版日期2010