NH3 Sensing by p-ZnO Thin Films

作者:Balakrishnan Lakshmi Narayanan*; Gowrishankar Subramaniam; Gopalakrishnan Nammalvar
来源:IEEE Sensors Journal, 2013, 13(6): 2055-2060.
DOI:10.1109/JSEN.2013.2244592

摘要

AlN and AlAs codoped p-ZnO thin films are fabricated by RF magnetron sputtering for gas sensing applications. For comparison, Al monodoped n-ZnO film is also grown. The conductivity of the films is confirmed by the Van der Pauw Hall effect measurement system. The structural and elemental properties of the films are studied by X-ray diffraction and time-of-flight secondary ion mass spectroscopy. Sensitivity measurements are performed with the fabricated p- and n-ZnO films for different concentrations of ammonia (200-1200 ppm) at different operating temperatures (room temperature: 100 degrees C and 150 degrees C). It is found that both p-ZnO films have higher sensitivity than that of the n-ZnO film. Furthermore, both p-ZnO films exhibit lower response and recovery times than n-ZnO film.

  • 出版日期2013-6