Novel dual-channel MOS bootstrapped switch circuit

作者：Jing Xin^*; Zhuang Yiqi; Tang Hualian; Zhang Li; Du Yongqian

来源：Journal of Xidian University, 2014, 41(3): 138-144.

DOI：10.3969/j.issn.1001-2400.2014.03.020

• Bootstrap circuits
• Charge pump
• CMOS switch linearization
• Constant on resistances
• Low voltages
• Switched capacitor circuits

A novel low-voltage, high-speed and high-linear dual-channel MOS bootstrapped switch is proposed. This proposed switch utilizes the bootstrapping technique of both NMOS and PMOS simultaneously, thus resulting in small-variation low-value on-resistance over the entire input signal range. The switch considers reliability constrains and is suitable for standard CMOS technology. Based on the 0.13 μm CMOS technology and 1.2 V power supply, simulation results show that the switch achieves an on-resistance variation less than 4.3% throughout the full range (Vpp=1 V) of the input signal range. For a 100 MHz input with 1 V (Vpp) amplitude, the switch has a total harmonic distortion (THD) up to -88.33 dB at the 100 MHz sampling frequency, about -14.8 dB and -29 dB increase, compared with the conventional bootstrapped NMOS switch and the standard CMOS transmission gate, respectively. The circuit could be applied to the low-voltage and high speed-resolution switched-capacitor circuits.

• 出版日期2014
• 单位西安电子科技大学