Binding energy of 2p-bound state of a hydrogenic donor impurity in a GaAs/Ga1-xAlxAs spherical quantum dot under hydrostatic pressure

作者：Bulut P; Erdogan I^*; Akbas H

来源：Physica E: Low-Dimensional Systems and Nanostructures , 2014, 63: 299-303.

DOI：10.1016/j.physe.2014.06.020

• Turning point
• Spherical dot
• Donor impurity
• Binding energy

By using a variational procedure within the effective mass approximation, we calculated the 2p state binding energy, E-2pha(x,P), and the binding energy turning point, R-2pEbT (X, P) of a hydrogenic donor impurity located at the centre of the GaAs GaAs/Ga1-xAlxAs spherical quantum dot under the influence of hydrostatic pressure. The results obtained show that the binding energy turning point, R-2pEbT(X, P) is an important factor in dealing with the 2p bound state of a hydrogenic donor impurity embedded at the centre of the quantum dot.

• 出版日期2014-9