A 0.003 mm(2) 10 b 240 MS/s 0.7 mW SAR ADC in 28 nm CMOS With Digital Error Correction and Correlated-Reversed Switching

作者:Tsai Jen Huan*; Wang Hui Huan; Yen Yang Chi; Lai Chang Ming; Chen Yen Ju; Huang Po Chuin; Hsieh Ping Hsuan; Chen Hsin; Lee Chao Cheng
来源:IEEE Journal of Solid-State Circuits, 2015, 50(6): 1382-1398.
DOI:10.1109/JSSC.2015.2413850

摘要

This paper describes a single-channel, calibration-free Successive-Approximation-Register (SAR) ADC with a resolution of 10 bits at 240 MS/s. A DAC switching technique and an addition-only digital error correction technique based on the non-binary search are proposed to tackle the static and dynamic non-idealities attributed to capacitor mismatch and insufficient DAC settling. The conversion speed is enhanced, and the power and area of the DAC are also reduced by 40% as a result. In addition, a switching scheme lifting the input common mode of the comparator is proposed to further enhance the speed. Moreover, the comparator employs multiple feedback paths for an enhanced regeneration strength to alleviate the metastable problem. Occupying an active area of 0.003 mm and dissipating 0.68 mW from 1 V supply at 240 MS/s in 28 nm CMOS, the proposed design achieves an SNDR of 57 dB with low-frequency inputs and 53 dB at the Nyquist input. This corresponds to a conversion efficiency of 4.8 fJ/c.-s. and 7.8 fJ/c.-s. respectively. The DAC switching technique improves the INL and DNL from +1.15/-1.01 LSB and +0.92/-0.28 LSB to within +0.55/-0.45 LSB and +0.45/-0.23 LSB, respectively. This ADC is at least 80% smaller and 32% more power efficient than reported state-of-the-art ADCs of similar resolutions and Nyquist bandwidths larger than 75 MHz.