A giant polarization value of Zn and Mn co-modified bismuth ferrite thin films

作者：Wu Jiagang^*; Qiao Sha; Wang John; Xiao Dingquan; Zhu Jianguo

来源：Applied Physics Letters, 2013, 102(5): 052904.

DOI：10.1063/1.4790380

A giant remanent polarization of BiFeO3 thin films is obtained by introducing Zn and Mn, and Bi(Fe0.93Mn0.05Zn0.02)O-3 (BFMZO) thin films were prepared on SrRuO3-buffered silicon substrates by the radio-frequency sputtering. An (111) orientation is induced in such a film because of the introduction of an SrRuO3 buffer layer. An enhanced ferroelectric behavior of 2P(r) similar to 235 mu C/cm(2) and 2E(c) similar to 612 kV/cm is observed in BFMZO thin films, together with a fatigue-free behavior. As a result, the introduction of Zn and Mn is a good way to improve the electrical behavior of BiFeO3 thin films.

• 出版日期2013-2-4
• 单位四川大学