Mechanism of electron beam poled SHG in 0.95GeS(2) center dot 0.05In(2)S(3) chalcogenide glasses

作者：Dong, Guoping; Tao, Haizheng^*; Xiao, Xiudi; Lin, Changgui; Zhao, Xiujian; Mao, Shun

来源：Journal of Physics and Chemistry of Solids, 2007, 68(2): 158-161.

DOI：10.1016/j.jpcs.2006.10.002

• chalcogenide glasses
• Raman spectroscopy
• optical properties

Utilizing the Maker fringe method, SHG was observed in the 0.95GeS(2) . 0.05In(2)S(3) chalcogenide glass irradiated by the electron beam and the intensity of SH increases with the enhancement of beam current from 15 to 25 nA. According to Raman spectra of the as-prepared and the irradiated one, no distinct micro-structural transformation was found. In this work, the built-in charge model was founded to interpret the poling mechanism of electron beam irradiation, the emission of the secondary electrons and Auger electrons results in the formation of positive region and the absorbed electrons form negative region. The positive region was situated near the poling surface, and the negative region was much deeper than the positive region. Between the two opposite charged regions, a strong space-charge electrostatic field, E-dc, is created, which leads to the nonzero x((2)) in the 0.95GeS(2) (.) 0.05In(2)S(3) glass. The emission of backscattered electrons does no contribution to the formation of E-dc.

• 出版日期2007-2
• 单位武汉理工大学