科研之友
微信
新浪微博
Facebook
分享链接
摘要
With the availability of advanced computing capability, it is fashionable to analyze and design insulated-gate bipolar transistors (IGBTs) using sophisticated 2-D and 3-D numerical simulation tools. However, analytical modeling of IGBTs allows a deeper understanding of the physics of operation, which can foster innovation. This paper reviews 1-D analytical models developed for the IGBT ON-state characteristics, switching behavior, and safe operating area for symmetric (nonpunchthrough) and asymmetric (punchthrough) devices.
- 出版日期2013-2
