HfO2-III-Nitride RF Switch With Capacitively Coupled Contacts

作者：Koudymov Alexei^*; Pala Nezih; Tokranov V; Oktyabrsky Serge; Gaevski Mikhail; Jain R; Yang J; Hu X; Shur Michael; Gaska Remis; Simin Grigory

来源：IEEE Electron Device Letters, 2009, 30(5): 478-480.

DOI：10.1109/LED.2009.2017284

• AlGaN/GaN
• capacitive coupling
• high-k dielectric
• HfO2
• radio-frequency (RF) switch

We report on the first metal-oxide-semiconductor AlGaN/GaN radio-frequency (RF) switch with capacitively coupled contacts using a HfO2 layer as the gate dielectric and surface passivation layer. The new insulating-gate RF switch has a lower leakage current and can handle higher RF powers than AlGaN/GaN HFET switches.

• 出版日期2009-5