Low-barrier heterojunction of epitaxial silicide composed of W-encapsulating Si clusters with n-type Si

作者：Okada Naoya^*; Uchida Noriyuki; Kanayama Toshihiko

来源：Applied Physics Letters, 2012, 101(21): 212103.

DOI：10.1063/1.4767136

We demonstrate electrical junction characteristics of epitaxially grown W silicide (WSin, n = 8-10) films composed of W-encapsulating Si clusters on Si substrates. The current-voltage and capacitance-voltage characteristics revealed that the WSin/n-Si junction is ohmic, while the WSin/p-Si junction is rectifying with good interface quality and a barrier height of 0.8 eV. The WSin film is an n-type high-carrier-concentration narrow-gap semiconductor with the Fermi level close to the conduction band edge of Si, and it forms a low-barrier heterojunction to n-Si.

• 出版日期2012-11-19