A new low voltage level-shifted FVF current mirror with enhanced bandwidth and output resistance

作者：Aggarwal Bhawna^*; Gupta Maneesha; Gupta Anil Kumar; Sangal Ankur

来源：International Journal of Electronics, 2016, 103(10): 1759-1775.

DOI：10.1080/00207217.2016.1138529

• FVF current mirror
• level-shifting technique
• low-supply voltage
• passive and active resistors
• super-cascode configuration

This paper proposes a new high-performance level-shifted flipped voltage follower (LSFVF) based low-voltage current mirror (CM). The proposed CM utilises the low-supply voltage and low-input resistance characteristics of a flipped voltage follower (FVF) CM. In the proposed CM, level-shifting configuration is used to obtain a wide operating current range and resistive compensation technique is employed to increase the operating bandwidth. The peaking in frequency response is reduced by using an additional large MOSFET. Moreover, a very high output resistance (in G range) along with low-current transfer error is achieved through super-cascode configuration for a wide current range (0-440 mu A). Small signal analysis is carried out to show the improvements achieved at each step. The proposed CM is simulated by Mentor Graphics Eldospice in TSMC 0.18 mu m CMOS, BSIM3 and Level 53 technology. In the proposed CM, a bandwidth of 6.1799 GHz, 1% settling time of 0.719 ns, input and output resistances of 21.43 and 1.14 G, respectively, are obtained with a single supply voltage of 1V. The layout of the proposed CM has been designed and post-layout simulation results have been shown. The post-layout simulation results for Monte Carlo and temperature analysis have also been included to show the reliability of the CM against the variations in process parameters and temperature changes.

• 出版日期2016-10