Ag diffusion in SiC high-energy grain boundaries: Kinetic Monte Carlo study with first-principle calculations

作者：Ko Hyunseok; Deng Jie; Szlufarska Izabela; Morgan Dane

来源：Computational Materials Science, 2016, 121: 248-257.

DOI：10.1016/j.commatsci.2016.04.027

• Silicon carbide
• TRISO
• Amorphous
• Diffusion
• Silver

The diffusion of silver (Ag) impurities in high energy grain boundaries (HEGBs) of cubic (3C) silicon carbide (SiC) is studied using an ab initio based kinetic Monte Carlo (kMC) model. This study assesses the hypothesis that the HEGB diffusion is responsible for Ag release in Tristructural-Isotropic (TRISO) fuel particles, and provides a specific example to increase understanding of impurity diffusion in highly disordered grain boundaries. The HEGB environment was modeled by an amorphous SiC (a-SiC), which approximately represents the local environments of HEGBs. The structure and stability of Ag defects were calculated using ab initio methods based on Density Functional Theory (DFT). The defect energetics suggested that the fastest diffusion takes place via an interstitial mechanism in a-SiC and that is what is modeled. Interstitial sites were identified by a gridded search and transition states were computed using the climbing image nudged elastic band method. The formation energy of Ag interstitials (relative to bulk Ag) and the Kinetic Resolved Activation (EKRA) energies between them were well approximated with Gaussian distributions that were then sampled in the kMC. The diffusion of Ag was simulated with the effective medium model using kMC. Ag diffusion coefficients were estimated for the temperature range of 1200-1600 degrees C. Ag in a HEGB is predicted to exhibit an Arrhenius type diffusion and with a diffusion prefactor and effective activation energy of (2.73 +/- 1.09) x 10 (10) m(2) s(-1) and 2.79 +/- 0.18 eV, respectively. The comparison between HEGB results to other theoretical studies suggested not only that GB diffusion is predominant over bulk diffusion, but also that the HEGB is one of fastest grain boundary paths for Ag diffusion in SiC. The Ag diffusion coefficient in the HEGB shows a good agreement with ion-implantation measurements, but is 2-3 orders of magnitude lower than the reported diffusion coefficient values extracted from integral release measurements on in-and out-of-pile samples. The discrepancy between GB diffusion and integral release measurements suggests that other contributions are responsible for fast release of Ag in some experiments and we propose that these contributions may arise from radiation enhanced diffusion.

• 出版日期2016-8