Multiple stacking of InGaAs/GaAs (731) nanostructures

作者：Xie Y Z; Kunets V P; Wang Z M^*; Dorogan V; Mazur Y I; Wu J; Salamo G J

来源：Nano-Micro Letters, 2009, 1(1): 1-3.

DOI：10.5101/nml.v1i1.p1-3

• Quantum dots
• MBE
• High index surfaces
• Nanostructures
• Atomic force microscopy

We studied the multilayering effects of InGaAs quantum dots (QDs) on GaAs(731), a surface lying inside of the stereographic triangle. The surfaces after stacking 16 InGaAs layers were characterized with highly non-uniformity of QD spatial distribution. The bunched step regions driven by strain accumulation are decorated by QDs, therefore GaAs(731) becomes a good candidate substrate for the growth of QD clusters. The unique optical properties of the QD clusters are revealed by photoluminescence measurements. By adjusting the coverage of InGaAs, a bamboo-like nanostructured surface was observed and the quantum dots aligned up in clusters to separate the "bamboo" into sections.

• 出版日期2009