A Thienoisoindigo-Naphthalene Polymer with Ultrahigh Mobility of 14.4 cm(2)/V.s That Substantially Exceeds Benchmark Values for Amorphous Silicon Semiconductors

作者：Kim, Gyoungsik; Kang, Seok-Ju; Dutta, Gitish K.; Han, Young-Kyu; Shin, Tae Joo; Noh, Yong-Young^*; Yang, Changduk

来源：Journal of the American Chemical Society, 2014, 136(26): 9477-9483.

DOI：10.1021/ja504537v

• FIELD-EFFECT TRANSISTORS
• THIN-FILM TRANSISTORS
• ORGANIC TRANSISTORS
• CONJUGATED POLYMERS
• PRINTED TRANSISTORS
• CARRIER MOBILITY
• CHARGE-TRANSPORT
• HOLE MOBILITIES
• SIDE-CHAINS
• PERFORMANCE

By considering the qualitative benefits associated with solution rheology and mechanical properties of polymer semiconductors, it is expected that polymer-based electronic devices will soon enter our daily lives as indispensable elements in a myriad of flexible and ultra low-cost flat panel displays. Despite more than a decade of research focused on designing and synthesizing state-of-the-art polymer semiconductors for improving charge transport characteristics, the current mobility values are still not sufficient for many practical applications. The confident mobility in excess of similar to 10 cm(2)/V.s is the most important requirement for enabling the realization of the aforementioned near-future products. We report on an easily attainable donor-acceptor (D-A) polymer semiconductor: poly(thienoisoindigo-alt-naphthalene) (PTIIG-Np). An unprecedented mobility of 14.4 cm(2)/V.s, by using PTIIG-Np with a high-k gate dielectric poly(vinylidenefiuoride-trifluoroethylene) (P(VDF-TrFE)), is achieved from a simple coating processing, which is of a magnitude that is very difficult to obtain with conventional TFTs by means of molecular engineering. This work, therefore, represents a major step toward truly viable plastic electronics.

• 出版日期2014-7-2