A Novel AC Technique for High Quality Porous GaN

作者：Mahmood Ainorkhilah^*; Ahmed Naser Mahmoud; Yusof Yuhamdan; Kwong Yam Fong; Siang Chuah Lee; Abd Husnen R; Hassan Zainuriah

来源：International Journal of Electrochemical Science, 2013, 8(4): 5801-5809.

• Porous GaN
• Alternating current photo-assisted electrochemical etching (ACPEC)
• Scanning Electron Microscopy (SEM)
• Photoluminescence
• Raman Spectroscopy

In this paper, we report the formation of porous GaN films under a novel alternating current (sine-wave a.c. (50 Hz)) photo-assisted electrochemical etching (ACPEC) conditions. The ac formed porous GaN with excellent structural and optical properties. Field emission scanning electron microscope (FESEM) micrographs indicated that the shapes of the pores are high quality hexagonal like and nano-building structures. The porous layer exhibited a substantial photolumuinescence (PL) intensity enhancement with red-shifted band-edge PL peaks associated with the relaxation of compressive stress. The shift of E-2(high) to the lower frequency in Raman spectra of the porous GaN films further confirms such a stress relaxation.

• 出版日期2013-4