Memristive behavior of ZnO/NiO stacked heterostructure

作者：Zhang, R.; Yuldashev, Sh. U.; Lee, J. C.; Yalishev, V. Sh.; Kang, T. W.; Fu, D. J.^*

来源：Microelectronic Engineering, 2013, 112: 31-34.

DOI：10.1016/j.mee.2013.05.018

• Memristive
• ZnO/NiO
• I-V hysteresis

We have prepared ZnO/NiO stacked heterostructure films by ultrasonic pyrolysis on heavily doped n-Si substrates and observed memristive behavior. The stacked structure films exhibited "pinched hysteresis loops" during current-voltage measurement for consecutive sweeping cycles at room temperature and elevated temperatures. The conductivity of the device has been investigated by measuring the time dependence of current under different bias voltage as further evidence for the memristive effect. The memristive behavior is interpreted by the migration of oxygen vacancies or nickel vacancies.

• 出版日期2013-12
• 单位武汉大学