Ultrahigh-Voltage SiC MPS Diodes With Hybrid Unipolar/Bipolar Operation

作者：Niwa Hiroki^*; Suda Jun; Kimoto Tsunenobu

来源：IEEE Transactions on Electron Devices, 2017, 64(3): 874-881.

DOI：10.1109/TED.2016.2636573

• Device simulation
• merged-p-i-n-Schottky (MPS) diode
• power diode
• silicon carbide (SiC)
• snapback phenomenon

In this paper, ultrahigh-voltage (UHV) SiC devices with hybrid unipolar/bipolar operation are introduced and demonstrated. As the first step of such a device, a merged p-i-n Schottky (MPS) diode with an epitaxial p(+)-anode layer is proposed to reduce the conduction loss of a bipolar device in the lowcurrent region. A "snapback" phenomenon is intensively investigated by analyticalmodeling, device simulation, and experiment and a design guideline of snapback-free hybrid operating MPS diodes is presented. Using the design guideline, snapbackfree MPS diodes are fabricated and forward characteristics are investigated. By using a proper edge termination structure, a UHV SiC MPS diode with breakdown voltage of 11.3 kV is demonstrated.

• 出版日期2017-3