A self-limiting layer-by-layer etching technique for 2H-MoS2

作者：Lee Choong Hee; Lee Edwin W II; McCulloch William; Jamal Eddine Zane; Krishnamoorthy Sriram; Newburger Michael J; Kawakami Roland K; Wu Yiying; Rajan Siddharth

来源：Applied Physics Express, 2017, 10(3): 035201.

DOI：10.7567/APEX.10.035201

We report controlled layer-by-layer removal of large-area, sulfurized, single-crystal molybdenum disulfide (MoS2) films using a digital etching technique, which utilizes oxidation and removal of the oxidized layer. We demonstrate a self-limiting oxidation process where Mo oxide covered the surface of MoS2. A constant etching rate of one monolayer/cycle and the uniformity of the etching process were also verified. We show that the etching of an integer number of MoS2 layers can be precisely controlled. No noticeable film quality degradation was observed after multiple cycles of digital etching, as confirmed by Raman mapping of the ratio of the E-2g(1) and A(1g) peak intensities.

• 出版日期2017-3