Multi-scale strategy for high-k/metal-gate UTBB-FDSOI devices modeling with emphasis on back bias impact on mobility

作者：Nier O^*; Rideau D; Niquet Y M; Monsieur F; Nguyen V H; Triozon F; Cros A; Clerc R; Barbe J C; Palestri P; Esseni D; Duchemin I; Smith L; Silvestri L; Nallet F; Tavernier C; Jaouen H; Selmi L

来源：Journal of Computational Electronics, 2013, 12(4): 675-684.

DOI：10.1007/s10825-013-0532-1

• UTBB-FDSOI devices
• Split C-V mobility measurements
• Back bias
• NEGF
• Multi-scale simulations
• TCAD

Mobility in high-k/metal-gate Ultra-Thin Body and Box Fully Depleted SOI devices has been extensively investigated by means of multi-scale simulations and experimental data. Split-CV mobility measurements have been performed for various Interfacial Layer Equivalent Oxide Thickness allowing an investigation of the physical mechanisms responsible for the mobility degradation at highk/Interfacial layer interface. The impact of the back bias on transport properties is investigated and mobility enhancement in the reverse regime (back gate inversion) is studied. A multi-scale simulation strategy is ranging from quantum Non-equilibrium Green%26apos;s Functions to semi-classical Kubo Greenwood approach. These advanced solvers made possible a throughout calibration of empirical TCAD mobility models.

• 出版日期2013-12
• 单位中国地震局