摘要

We present a convenient and reliable method for the determination of the internal quantum efficiency (IQE) in GaN-based light-emitting diodes (LEDs) based on the carrier rate equation model. By using the peak point of the efficiency curve as the parameter of the rate equation analysis, we show the IQE of LEDs is unambiguously determined without any information on the recombination coefficients or LED structures. The theoretical analysis model was used to determine the IQE of LED samples. When the theoretical IQE model is applied to the measured external quantum efficiency (EQE) of a blue and a green LED, good agreements between the measured data and the theoretical-fit curves are found. From the measured EQE and the evaluated IQE values, the light extraction efficiency of the LED samples is obtained.

  • 出版日期2013-7