科研之友
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摘要
A highly reliable small-signal parameter extraction method for parasitic elements of the 0.1-mu m GaAs metamorphic high electron mobility transistors is presented. De-embedding scheme for the coplanar waveguide (CPW) feeding structure is utilised in this method in a frequency range of 0.5-110 GHz with an enhancement approach to the correction of source inductance parameter sensitivity derived from oscillating measurements. The parasitic extrinsic capacitances are determined by modelling an. equivalent circuit including the interaction between the sub-model and the CPW feedings. From this method, the authors achieved the most accurate parameter prediction with an effective fitting error of 10.83% among the small-signal models reported to date.
- 出版日期2016-1-29
