Weak antilocalization in gate-controlled AlxGa1-xN/GaN two-dimensional electron gases

作者：Thillosen N^*; Cabanas S; Kaluza N; Guzenko V A; Hardtdegen H; Schaepers Th

来源：Physical Review B, 2006, 73(24): 241311.

DOI：10.1103/PhysRevB.73.241311

Weak antilocalization and the Shubnikov-de Haas effect were investigated in AlxGa1-xN/GaN two-dimensional electron gases. The weak antilocalization measurements on a gated sample revealed a constant spin-orbit scattering length, which does not change if the Al content or the thickness of the AlxGa1-xN barrier layer is varied. The occurrence of spin-orbit coupling is assigned to the lack of crystal inversion symmetry. Although for some of the samples a beating pattern was observed in the Shubnikov-de Haas oscillations, its presence was not attributed to spin-orbit coupling but rather to inhomogeneities in the AlxGa1-xN barrier.

• 出版日期2006-6