摘要
This paper investigates the properties of the on-wafer coupled interconnects built in a 0.18 mu m CMOS technology for RF applications. A SPICE compatible equivalent circuit model is developed. The proposed model is an extension of a 2-Pi equivalent circuit model for single-line interconnects by adding two coupling components. The model parameters are extracted from four-port S-parameter simulation results through a calibrated electromagnetic (EM) simulator, i.e. HFSS. The accuracy of the model is validated from 500 MHz to 20 GHz.
- 出版日期2010
- 单位南阳理工学院