科研之友
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摘要
Indium oxide ( In2O3) violet photodiodes were fabricated. The In2O3 layers were from oxidation of InN deposited by magnetron reactive sputtering. It was found the photocurrent approximately 5.06 x 10(-4) A at a bias of 2 V and a photocurrent to dark current contrast ratio higher than around two orders of magnitude. The reverse leakage current prior to breakdown is around 10(-5) A. The photodiodes exhibited a narrow responsive region at wavelength from 400 nm to 440 nm. The values of responsivity and quantum efficiency (QE) at 420 nm at biases of 2 V were 0.1985 A/W and 58.62%, respectively.
- 出版日期2006-7
