Analysis of Charge Deposition and Collection Caused by Low Energy Neutrons in a 25-nm Bulk CMOS Technology

作者：Abe Shin ichiro^*; Watanabe Yukinobu

来源：IEEE Transactions on Nuclear Science, 2014, 61(6): 3519-3526.

DOI：10.1109/TNS.2014.2367513

• Monte Carlo simulation
• neutrons
• PHYSERD
• single event upset (SEU)
• terrestrial radiation effects

Neutron-induced single event upsets (SEUs) in a 25-nm NMOSFET are analyzed using PHYSERD simulation. We confirm that the secondary H and He ions dominate SEUs above the threshold energies of (n, p) and (n,alpha) reactions although the production cross sections for H and He ions are smaller than the elastic scattering cross sections below 20 MeV. The SEUs induced by secondary H and He ions are influenced strongly by the size of the interaction volume considered in the simulation because the ranges of H and He ions are much longer than those of elastic recoils.

• 出版日期2014-12