All-organic self-contact transistors

作者:Tamura Sumika; Kadoya Tomofumi*; Mori Takehiko
来源:Applied Physics Letters, 2014, 105(2): 023301.
DOI:10.1063/1.4890237

摘要

Organic transistors with chemically doped source/drain electrodes are fabricated by selectively doping tetracyanoquinodimethane to a thin film of hexamethylenetetrathiafulvalene. Using organic materials to create all components, including substrates, gate electrodes, and dielectrics, all-organic self-contact transistors are realized. Due to the smooth charge carrier injection from organic electrodes composed of the same type of molecules, these transistors exhibit excellent mobility exceeding 1 cm(2) V-1 s(-1).

  • 出版日期2014-7-14