An alternative approach for optimal carrier concentration towards ideal thermoelectric performance

作者：Rawat Pankaj Kumar; Paul Biplab; Banerji P^*

来源：Physica Status Solidi-Rapid Research Letters, 2012, 6(12): 481-483.

DOI：10.1002/pssr.201206475

• thermoelectricity
• carrier concentration
• impurity levels
• power factor

Optimization of the carrier concentration of any thermoelectric material is a prime factor for the enhancement of the thermoelectric figure of merit. An alternative approach for achieving optimal carrier concentration is presented here. We introduce impurity levels of ytterbium (Yb) near the valence band edge of Pb1xSnx Te. The temperature-dependent redistribution of electrons between the Yb-impurity levels and the valence band is found to optimize the excess hole concentration at low temperature and negating the effect of intrinsic conduction at higher temperature leading to significantly improved thermoelectric performance in Pb1xSnx Te.

• 出版日期2012-12