Annealing and surface conduction on Hydrogen peroxide treated bulk melt-grown, single crystal ZnO

作者：Mtangi W^*; Nel J M; Auret F D; Chawanda A; Diale M; Nyamhere C

来源：Physica B: Condensed Matter , 2012, 407(10): 1624-1627.

DOI：10.1016/j.physb.2011.09.101

• Hall effect
• Surface conduction
• Zinc interstitials
• Annealing
• Shallow donors

We report on the studies carried out on hydrogen peroxide treated melt-grown, bulk single crystal ZnO samples. Results show the existence of two shallow donors in the as-received ZnO samples with energy levels (37.8 +/- 0.3) meV that has been suggested as Zn-i related and possibly H-complex related and (54.5 +/- 0.9) meV, which has been assigned to an Al-related donor. Annealing studies performed on the hydrogen peroxide treated samples reveal the existence of a conductive channel in the samples in which new energy levels have been observed, Zn vacancies, related to the Group I elements, X-Zn. The surface donor volume concentration of the conductive channel was calculated from a theory developed by Look (2007) [1]. Results indicate an increase in the surface volume concentration with increasing annealing temperature from 60 x 10(17) cm(-3) at 200 degrees C to 4.37 x 10(18) cm(-3) at 800 degrees C.

• 出版日期2012-5-15