摘要
A heterojunction photodiode was fabricated by forming two contact regions on a glass substrate: one side was a cast film of perovskite-type niobate [(CH(3))(3)NHSr(2)Nb(3)O(10)] as a n-type photosemiconductor and the other side a cast film of Zn-saponite (Na(0.96)[Si(7.18)Al(0.64)]Zn(6.20)O(20)-(OH)(2)) as a p-type semiconductor under oxygen atmosphere. Diode-type current-voltage characteristics were obtained under the illumination of light (340 nm) and oxygen atmosphere (1 atm) at 25-100 degrees C. The interfacial structure was studied by means of focused ion-beam and transmission electron microscopy techniques, confirming the contact of the two different nanosheets on a nanometer scale. The results are discussed on the basis of the nanosheet band structures.
- 出版日期2008-3