A yellow emitting phosphor Dy:Bi4Si3O12 crystal for LED application

作者：Yang Bobo; Xu Jiayue^*; Zhang Yan; Chu Yaoqing; Wang Meiling; Wen Yuxian

来源：Materials Letters, 2014, 135: 176-179.

DOI：10.1016/j.matlet.2014.07.167

• Crystal growth
• Luminescence
• Optical materials and properties
• Dy:Bi4Si3O12
• LED

Dy-doped bismuth silicate (Bi4Si3O12, BSO) crystals were grown by the modified vertical Bridgman method. The luminescence properties for light emitting diode (LED) were investigated. Efficient energy transition from Bi ions to Dy ions has been established by photoluminescence investigation upon UV excitation and results in blue, yellow and red emissions at about 487 nm, 574 nm and 662 nm respectively. Photoluminescence intensity varies with excitation wavelength and the doping concentration of Dy3+, and Chromaticity coordinates does not changes distinctly. The samples exhibit stable yellow light by varying the relative concentration of Dy3+ and even when the excitation wavelengths changes from UV to n-UV. These results indicate that Dy:Bi4Si3O12 is a highly yellow emitting crystal with potential application in yellow LEDs.

• 出版日期2014-11-15
• 单位上海应用技术大学