High Dielectric-permittivity Properties and Relevant Mechanism of NaCu3Ti3Sb0.5Nb0.5O12</ sub> Ceramics

作者：Yang Shuai; Xu Pan-Pan^*; Wang Ming-Wen; Hao Wen-Tao^*; Sun Li; Cao En-Si; Zhang Yong-Jia

来源：Journal of Inorganic Materials, 2017, 32(10): 1029-1034.

DOI：10.15541/jim20160702

• NaCu3Ti3Sb0.5Ta0.5O12
• high dielectric-permittivity properties
• CuO secondary phase
• aliovalences
• internal barrier layer capacitance effect

A series of NaCu3Ti3Sb0.5Ta0.5O12 ceramics were prepared by conventional solid-state reaction technique at different sintering temperatures. Their crystalline structures, microstructures, dielectric properties and complex impedance were systematically investigated. All the ceramics show the main phase of perovskite-related crystallographic structure, and their dielectric properties change significantly with sintering temperature. Those ceramics sintered above 1020 degrees C perform high dielectric-permittivity properties with epsilon' over 3000. Impedance spectroscopy analysis reveals that NaCu3Ti3Sb0.5Ta0.5O12 ceramics are electrically heterogeneous and composed of semiconducting grains and insulating grain boundaries. Moreover, a small amount of CuO secondary phase and Cu2+/Cu+, Ti4+/Ti3+, Sb5+/Sb3+ and Ta5+/Ta3+ aliovalences are found to exist in NaCu3Ti3Sb0.5Ta0.5O12 ceramics through XRD and XPS analysis. Internal barrier layer capacitance effect suggests the origin of the high dielectric-permittivity properties in NaCu3Ti3Sb0.5Ta0.5O12 ceramics.

• 出版日期2017-10
• 单位太原理工大学