Very large photoresponsiviy and high photocurrent linearity for Ge-dot/SiO2/SiGe photoMOSFETs under gate modulation

作者：Kuo Ming Hao; Hong Po Yu; Liu Ping Che; Lee Meng Chun; Lin Horng Chih; George Tom; Li Pei Wen^*

来源：Optics Express, 2017, 25(21): 25467-25476.

DOI：10.1364/OE.25.025467

We report a novel visible-near infrared photoMOSFET containing a self-organized, gate-stacking heterostructure of SiO2/Ge-dot/SiO2/SiGe-channel on Si substrate that is simultaneously fabricated in a single oxidation step. Our typical photoMOSFETs exhibit very large photoresponsivity of 1000-3000A/W at low optical power (< 0.1 mu W) or large photocurrent gain of 10(3)-10(8)A/A with a wide dynamic power range of at least 6 orders of magnitude (nW-mW) linearity at 400-1250 nm illumination, depending on whether the photoMOSFET operates at V-G = + 3- + 4.5V or -1- + 1V. Numerical simulations reveal that photocarrier confinement within the Ge dots and the SiGe channel modifies the oxide field and the surface potential of SiGe, significantly increasing photocurrent and improving linearity.

• 出版日期2017-10-16
• 单位中央民族大学; 中国科学院电工研究所