A Metal-Insulator-Semiconductor Solar Cell With High Open-Circuit Voltage Using a Stacking Structure

作者：Chang Tzu Yueh^*; Chang Chun Lung; Lee Hsin Yu; Lee Po Tsung

来源：IEEE Electron Device Letters, 2010, 31(12): 1419-1421.

DOI：10.1109/LED.2010.2073437

• Metal-insulator-semiconductor (MIS) solar cells
• open-circuit voltage
• photovoltaic devices
• stacking solar cells

A stacking metal-insulator-semiconductor (MIS) solar cell structure, which integrates an n-type MIS solar cell with a p-type MIS solar cell, is proposed to effectively enlarge the open-circuit voltage (V-oc). The measured V-oc is up to 0.71 V under simulated air mass 1.5 illumination (100 mW/cm(2)). This V-oc is larger than those of the n-type or p-type MIS solar cells with or without surface passivation. In this letter, we successfully demonstrate the feasibility of the V-oc enhancement of MIS solar cells by using a stacking structure.

• 出版日期2010-12