Modified metal-induced lateral crystallization using amorphous Ge/Si layered structure

作者：Kanno H^*; Kenjo A; Sadoh T; Miyao M

来源：Applied Physics Letters, 2004, 85(6): 899-901.

DOI：10.1063/1.1780595

Modified metal-induced lateral crystallization (MILC) using a-Ge/a-Si/Ni/SiO2 layered structures has been investigated. MILC growth velocity in the a-Ge/a-Si layered structures was enhanced by three times compared with that in the a-Si single layers. As a result, poly-Si films with large areas (similar to10 mum) were obtained in a short time annealing (<5 h) at 550 degreesC. It is speculated that crystal nucleation in the a-Ge layers stimulated the bond rearrangement in the a-Si layers, which enhanced the MILC velocity. This will be a powerful tool for realizing large poly-Si areas on insulating films for future system-in-displays.

• 出版日期2004-8-9