A unified charge-based model for SOI MOSFETs applicable from intrinsic to heavily doped channel

作者：Zhang Jian; He Jin^*; Zhou Xing Ye; Zhang Li Ning; Ma Yu Tao; Chen Qin; Zhang Xu Kai; Yang Zhang; Wang Rui Fei; Han Yu; Chan Mansun

来源：Chinese Physics B, 2012, 21(4): 047303.

DOI：10.1088/1674-1056/21/4/047303

• charge-based model
• silicon-on-insulator metal-oxide semiconductor field-effect transistors
• compact model
• double gate

A unified charge-based model for fully depleted silicon-on-insulator (SOI) metal-oxide semiconductor field-effect transistors (MOSFETs) is presented. The proposed model is accurate and applicable from intrinsic to heavily doped channels with various structure parameters. The framework starts from the one-dimensional Poisson-Boltzmann equation, and based on the full depletion approximation, an accurate inversion charge density equation is obtained. With the inversion charge density solution, the unified drain current expression is derived, and a unified terminal charge and intrinsic capacitance model is also derived in the quasi-static case. The validity and accuracy of the presented analytic model is proved by numerical simulations.

• 出版日期2012-4
• 单位北京大学; 香港科技大学; 深港产学研基地