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摘要
This paper presents a two-stage fully differential inductorless wideband low noise amplifier (LNA) with high dynamic range, using a switchable capacitive attenuation circuit, selectable-input impedance-matching topology, and bypassable amplifier. The proposed LNA is fabricated in a double-oxide 65 nm/0.2 mu m minimum channel length CMOS technology and achieves a bandwidth from 500 MHz to 2.5 GHz, a voltage gain range of 30.6 dB, a minimum noise figure of 4.1 dB, and a maximum IIP3 of 22.8 dBm. The LNA dissipates between 28.8 and 39.5 mW and occupies an area of 0.041 mm(2).
- 出版日期2012-3
